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| PHP/PHD3055E TrenchMOSTM standard level FET Rev. 06 -- 25 March 2002 Product data 1. Description N-channel standard level field-effect power transistor in a plastic package using TrenchMOSTM1 technology. Product availability: PHP3055E in SOT78 (TO-220AB) PHD3055E in SOT428 (D-PAK). 2. Features s Fast switching s Low on-state resistance. 3. Applications s DC to DC converters s Switch mode power supplies. 4. Pinning information Table 1: Pinning - SOT78, SOT428 simplified outline and symbol Simplified outline mb mb Pin Description 1 2 3 mb gate (g) Symbol d drain (d) source (s) mounting base, connected to drain (d) [1] g s MBB076 2 1 Top view MBK106 3 MBK091 123 SOT78 (TO-220AB) [1] It is not possible to make connection to pin 2 of the SOT428 package. SOT428 (D-PAK) 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. Philips Semiconductors PHP3055E series TrenchMOSTM standard level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 C Tj 175 C Tmb = 25 C; VGS = 5 V Tmb = 25 C Tj = 25 C; VGS = 10 V; ID = 5.5 A Typ 120 Max 60 10.3 33 175 150 Unit V A W C m drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) Tmb = 25 C peak source (diode forward) current Tmb = 25 C; pulsed; tp 10 s unclamped inductive load; ID = 3.3 A; tAL = 0.22 ms; VDD 25 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 C unclamped inductive load; VDD 25 V; RGS = 50 ; VGS = 10 V; Figure 4 Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 Conditions 25 C Tj 175 C 25 C Tj 175 C; RGS = 20 k Min -55 -55 Max 60 60 20 10.3 7.3 41 33 +175 +175 10.3 41 25 Unit V V V A A A W C C A A mJ Source-drain diode Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy IDS(AL)S non-repetitive avalanche current - 10.3 A 9397 750 09354 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 06 -- 25 March 2002 2 of 14 Philips Semiconductors PHP3055E series TrenchMOSTM standard level FET 03aa16 120 Pder 120 I der (%) 03aa24 (%) 80 80 40 40 0 0 50 100 150 200 o Tmb ( C) 0 0 50 100 150 200 o Tmb ( C) P tot P der = ---------------------- x 100% P tot ( 25 C ) ID I der = ------------------ x 100% I D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. 102 ID (A) Limit R DS(on) = VDS / ID !=D!$ 10 tp = 10 s 100 s DC 1 1 ms 10 ms 10-1 1 10 VDS (V) 102 Tmb = 25 C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 09354 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 06 -- 25 March 2002 3 of 14 Philips Semiconductors PHP3055E series TrenchMOSTM standard level FET 102 !=D"! IDS(AL)S (A) 10 25 C 1 Tj prior to avalanche = 150 C 10-1 10-3 10-2 10-1 1 tAL (ms) 10 Unclamped inductive load; VDD 25 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 C and 150 C. Fig 4. Non-repetitive avalanche ruggedness current as a function of pulse duration. 9397 750 09354 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 06 -- 25 March 2002 4 of 14 Philips Semiconductors PHP3055E series TrenchMOSTM standard level FET 7. Thermal characteristics Table 4: Rth(j-mb) Rth(j-a) Thermal characteristics Conditions SOT78 package; vertical in still air SOT428 package; SOT428 minimum footprint; mounted on a PCB SOT428 packages; SOT404 minimum footprint; mounted on a PCB Min Typ Max Unit 60 75 4.5 K/W K/W K/W thermal resistance from junction to mounting base Figure 5 thermal resistance from junction to ambient Symbol Parameter - 50 - K/W 7.1 Transient thermal impedance 10 03ah35 Zth(j-mb) (K/W) = 0.5 1 0.2 0.1 P = tp T 0.05 0.02 single pulse 10-1 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 tp T t Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 09354 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 06 -- 25 March 2002 5 of 14 Philips Semiconductors PHP3055E series TrenchMOSTM standard level FET 8. Characteristics Table 5: Characteristics Tj = 25 C unless otherwise specified Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 10 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 55 V; VGS = 0 V Tj = 25 C Tj = 175 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 10 V; VDS = 0 V VGS = 10 V; ID = 5.5 A; Figure 8 and 9 Tj = 25 C Tj = 175 C Dynamic characteristics Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VSD trr Qr total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain (diode forward) voltage IS = 10 A; VGS = 0 V; Figure 13 reverse recovery time recovered charge IS = 10 A; dIS/dt = -100 A/s; VGS = 0 V VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 ID = 10 A; VDD = 44 V; VGS = 10 V; Figure 14 5.8 1.5 3.2 190 55 40 3 26 8 10 1.1 32 50 250 80 50 10 35 15 20 1.5 nC nC nC pF pF pF ns ns ns ns V ns nC 120 250 150 315 m m 0.05 10 10 500 100 A A nA 2 1 3 4 6 V V V 60 55 V V Conditions Min Typ Max Unit VDD = 30 V; RL = 2.7 ; VGS = 10 V; RG = 5.6 ; resistive load - Source-drain diode 9397 750 09354 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 06 -- 25 March 2002 6 of 14 Philips Semiconductors PHP3055E series TrenchMOSTM standard level FET 10 ID (A) 8 Tj = 25 C 10 V 8V 03ah37 10 ID (A) 8 VDS > ID x RDSon 03ah39 7V 6.5 V 6 6V 4 5.5 V 2 2 175 C VGS = 4.5 V 0 0 0.4 0.8 1.2 1.6 2 VDS (V) 0 0 2 4 6 VGS (V) 8 Tj = 25 C 4 6 5V Tj = 25 C Tj = 25 C and 175 C; VDS > ID x RDSon Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 0.5 RDSon () 0.4 VGS = 5 V 5.5V 6V !=D!& 2.4 a 1.8 !== & Tj = 25 C 0.3 6.5 V 7V 1.2 0.2 8V 10 V 0.1 0.6 0 0 2 4 6 8I 10 D (A) 0 -60 0 60 120 Tj ( C) o 180 Tj = 25 C R DSon a = --------------------------R DSon ( 25 C ) Fig 8. Drain-source on-state resistance as a function of drain current; typical values. Fig 9. Normalized drain-source on-state resistance factor as a function of junction temperature. 9397 750 09354 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 06 -- 25 March 2002 7 of 14 Philips Semiconductors PHP3055E series TrenchMOSTM standard level FET 03aa32 5 VGS(th) (V) 4 10-1 ID (A) 03aa35 max 10-2 3 typ 10-3 min typ max 2 min 10-4 1 10-5 0 -60 0 60 120 Tj ( C) o 10-6 180 0 2 4 VGS (V) 6 ID = 1 mA; VDS = VGS Tj = 25 C; VDS = 5 V Fig 10. Gate-source threshold voltage as a function of junction temperature. Fig 11. Sub-threshold drain current as a function of gate-source voltage. 103 03ah41 C (pF) Ciss 102 Coss Crss 10 10-1 1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 9397 750 09354 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 06 -- 25 March 2002 8 of 14 Philips Semiconductors PHP3055E series TrenchMOSTM standard level FET 10 IS (A) 8 VGS = 0 V 03ah40 15 VGS (V) 12 ID = 10 A Tj = 25 C VDD = 11 V 03ah42 44 V 6 9 4 175 C 6 2 Tj = 25 C 0 0 0.4 0.8 VSD (V) 1.2 3 0 0 2 4 6 QG (nC) 8 Tj = 25 C and 175 C; VGS = 0 V ID = 10 A; VDD = 11 V and 44 V Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 14. Gate-source voltage as a function of gate charge; typical values. 9397 750 09354 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 06 -- 25 March 2002 9 of 14 Philips Semiconductors PHP3055E series TrenchMOSTM standard level FET 9. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E p A A1 q D1 mounting base D L1(1) L2 Q L b1 1 2 3 b c e e 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.9 0.7 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1(1) 3.30 2.79 L2 max. 3.0 p 3.8 3.6 q 3.0 2.7 Q 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB EIAJ SC-46 EUROPEAN PROJECTION ISSUE DATE 00-09-07 01-02-16 Fig 15. SOT78 (TO-220AB). 9397 750 09354 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 06 -- 25 March 2002 10 of 14 Philips Semiconductors PHP3055E series TrenchMOSTM standard level FET Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped) SOT428 seating plane y A E b2 A A1 mounting base A2 E1 D1 D HE L2 2 L L1 1 b1 e e1 b 3 wM A c 0 10 scale 20 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 2.38 2.22 A1(1) 0.65 0.45 A2 0.93 0.73 b 0.89 0.71 b1 1.1 0.9 b2 5.46 5.26 c 0.4 0.2 D 6.22 5.98 D1 min. 4.0 E 6.73 6.47 E1 e e1 HE 10.4 9.6 L 2.95 2.55 L1 min. 0.5 L2 0.9 0.5 w 0.2 y max. 0.2 4.81 2.285 4.57 4.45 Note 1. Measured from heatsink back to lead. OUTLINE VERSION SOT428 REFERENCES IEC JEDEC TO-252 JEITA SC-63 EUROPEAN PROJECTION ISSUE DATE 99-09-13 01-12-11 Fig 16. SOT428 (D-PAK). 9397 750 09354 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 06 -- 25 March 2002 11 of 14 Philips Semiconductors PHP3055E series TrenchMOSTM standard level FET 10. Revision history Table 6: 06 Revision history CPCN Description Product data; sixth version; supersedes PHD_PHP3055E_5 of 1 August 1999. Modifications: Rev Date 20020325 * The format of this specification has been redesigned to comply with Philips Semiconductors' new presentation and information standard 9397 750 09354 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 06 -- 25 March 2002 12 of 14 Philips Semiconductors PHP3055E series TrenchMOSTM standard level FET 11. Data sheet status Data sheet status[1] Objective data Preliminary data Product status[2] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Product data Production [1] [2] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 12. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. 9397 750 09354 Fax: +31 40 27 24825 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 06 -- 25 March 2002 13 of 14 Philips Semiconductors PHP3055E series TrenchMOSTM standard level FET Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Transient thermal impedance . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 (c) Koninklijke Philips Electronics N.V. 2002. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 25 March 2002 Document order number: 9397 750 09354 |
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